Device Electronics Based on nanoWires and NanoTubes

Lead Research Organisation: University of Sheffield
Department Name: Electronic and Electrical Engineering

Abstract

There is considerable scope for CNFETs and Si Nanowires with their capability of ballistic transport, to be introduced into standard CMOS via a hybrid technology.The main reason currently hampering the use of this technology is an absence of controlled fabrication techniques in MOS type configurations with predictable device characteristics. Adequate physical models and simulation tools are necessary to address this issue.collaborative research involves four partners: 1) Pisa : Atomistic modelling of ballistic transport in gated structures with contacts. (2) Vienna: Effective mass approach to transport inclusive of scattering.(3) De Montfort University : Characterisation, parameter extraction and defect analysis of devices fabricated at Cambridge. The parameters will be fed into the modelling at Pisa and Vienna.(4) Cambridge University : Fabrication of devices.overall goal of the project is to carry out a comprehensive analysis linking theory with experiment to enable some fundamental design rules for fabrication of such technologies in future.

Related Projects

Project Reference Relationship Related To Start End Award Value
EP/D064465/1 15/01/2007 27/10/2007 £484,397
EP/D064465/2 Transfer EP/D064465/1 28/10/2007 27/10/2010 £411,272
 
Description GW calculations of carbon nanotubes 
Organisation Elettra Sincrotrone Trieste
Country Italy, Italian Republic 
Sector Academic/University 
PI Contribution We used the code GWW supplied by Trieste to investigate accurate bandgaps in carbon nanotubes, which was a major objective of project. These bandgaps were subsequently used by us to accurately assess the device performance of these materials for future ITRS requirements.
Collaborator Contribution Trieste supplied their inhouse code GWW using wannier functions for accuate calculation of bandgaps in carbon based materials
Impact 1. S.Taioli, P. Umari and M. M. De Souza, "Electronic Properties of extended graphene nanomaterials from GW calculations", Phys. Status Solidi B, 1-5 (2009) / DOI 10.1002/pssb.200982339. 2. Electronic Bandgaps of semiconductor zig-zag carbon nanotubes using GW calculations", P. Umari, O. Petrenko, S. Tiaioli, M. M. De Souza, Journal of Chemical Physics 136, 181101 (2012) , most downloaded article in May 2012 3. Are Carbon Nanotubes still a viable option for ITRS 2024? P.B. Pillai, P. Umari and M. M. De Souza, Proc. IEEE IEDM 2013
Start Year 2009